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HGTG30N60A4D Datasheet N-channel IGBT

Manufacturer: onsemi

Overview: SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices bining the.

Key Features

  • of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The much lower on.
  • state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti.
  • parallel is the development type TA49373. This IGBT is ideal for many high voltage switching.

Similar Datasheet

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Fairchild Semiconductor Logo HGTG30N60A4 N-Channel IGBT Fairchild Semiconductor
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